FDMS86105 MOSFET Power Electronics N-Channel
Enhancement Mode Device High Performance Reliable Power Switching Solution
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The FDMS86105 is an 8-PowerTDFN packaged N-Channel MOSFET power electronics device that is designed to provide improved system reliability and enhanced power efficiency. This device features an optimized gate charge, fast switching times, and low on-resistance to reduce power dissipation. The built-in Avalanche Energy Rated (AER) structure provides a robust and reliable protection against voltage spikes, ensuring safe operation of the system.
The FDMS86105 also offers a high operating temperature range, making it suitable for a wide range of applications. The advanced packaging design helps to reduce PCB space requirements and provides improved thermal management. The device is designed to meet the requirements of automotive and industrial applications.
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FDMS86105 MOSFET Power Electronics N-Channel Enhancement Mode Device High Performance Reliable Power Switching Solution Images
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