2N7002ET7G MOSFET Power Electronics
TO-236-3 Package Low On-Resistance High Efficiency Fast Switching Speed
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The 2N7002ET7G is a N-channel Enhancement Mode Field Effect Transistor (MOSFET) in a TO-236-3 package. It is designed for general purpose switching and amplifier applications and provides low on-resistance with fast switching times. It has an operating voltage of -20V to -60V and a drain current of -200mA to -1A. It features low gate charge, low input capacitance and low output capacitance making it ideal for high-speed switching applications. This device also has excellent thermal characteristics and is RoHS compliant.
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2N7002ET7G MOSFET Power Electronics TO-236-3 Package Low On-Resistance High Efficiency Fast Switching Speed Images
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