IRF1010EPBF MOSFET Power
Electronics High Performance High Reliability Switching Solution
The IRF1010EPBF is a high-density MOSFET transistor with a drain-source breakdown voltage of 100V and a maximum drain current of 10A. This transistor is ideal for high-power applications as it has excellent switching characteristics and high speed switching capabilities. It is also suitable for use in a wide range of applications such as motor control, power supplies, and home appliances. The device is housed in a TO-220AB package, making it suitable for a wide range of mounting options.
Features:
• N-Channel Enhancement Mode
• High-Speed Switching
• Low On-Resistance
• Low Input Capacitance
• Low Gate Charge
• 100% Avalanche Tested
• Operating Temperature Range: -55°C to 175°C
Specifications:
• Drain-Source Voltage (Vdss): 500V
• Continuous Drain Current (Id): 10A
• On-Resistance (Rds): 0.020 Ohms
• Gate-Source Voltage (Vgs): ±20V
• Input Capacitance (Ciss): 475pF
• Dynamic Output Characteristics (Qg): 7.5nC
• Packaging: TO-220
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IRF1010EPBF MOSFET Power Electronics High Performance High Reliability Switching Solution Images
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