Sign In | Join Free | My portofva.com |
|
Brand Name : Infineon
Model Number : IRF5305STRLPBF
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55 V
Current - Continuous Drain (Id) @ 25°C : 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 60mOhm @ 16A, 10V
IRF5305STRLPBF MOSFET Power Electronics N-Channel Fast Switching TechnologySurface Mount
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 60mOhm @ 16A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | D2PAK | |
Package / Case |
Lead-Free
Advanced Process
TechnologySurface Mount(IRF5305S)
Low-profile through-hole(IRF5305L)
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedizeddevice designthatHEXFETPowerMOSFETsare well knownfor, provides the designerwith an extremelyefficient and reliable device for use in a wide variety ofapplications.The D'Pak is a surface mount power package capable ofaccommodating die sizes up to HEX-4.It provides thehighest power capability and the lowest possible on-resistance in any existing surface mount package. TheD2Pak is suitable for high current applications because ofits low internal connectjon resistance and can dissipateup to 2.0VV in a typical surface mount application.The through-hole version(IRF5305L)is available for lowprofile applications.
![]() |
IRF5305STRLPBF MOSFET Power Electronics N-Channel Fast Switching TechnologySurface Mount Images |