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Brand Name : Infineon
Model Number : IRFR1010ZTRPBF
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55 V
Current - Continuous Drain (Id) @ 25°C : 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 7.5mOhm @ 42A, 10V
IRFR1010ZTRPBF MOSFET Power Electronics N-Channel 55V Fast Switching Package TO-252
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 7.5mOhm @ 42A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 100µA | |
Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 140W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | D-Pak | |
Package / Case |
Features:
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-free
Description:
ThisHEXFETPowerMOSFET utilizes thelatestprocessing techniques to achieve extremely lowon-resistance persilicon area. Additionalfeaturesof this design are a 175°C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating. These featurescombine tomake this design an extremely efficientand reliable device for use in a wide variety ofapplications.
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IRFR1010ZTRPBF MOSFET Power Electronics N-Channel 55V Fast Switching Package TO-252 Images |