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Brand Name : Infineon
Model Number : IRF7473TRPBF
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100 V
Current - Continuous Drain (Id) @ 25°C : 6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 26mOhm @ 4.1A, 10V
IRF7473TRPBF MOSFET Power Electronics N-Channel 100V High Speed Switching Package 8-SOIC
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 26mOhm @ 4.1A, 10V | |
Vgs(th) (Max) @ Id | 5.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 3180 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-SO | |
Package / Case |
Applications:
Telecom and Data-Com 24 and 48V input DC-DC converters
Motor Control
Uninterrutible Power Supply
Lead-Free
Benefits:
Ultra Low On-Resistance
High Speed Switching
Low Gate Drive Current Due to Improved Gate Charge Characteristic
Improved Avalanche Ruggedness and Dynamic dv/dt
Fully Characterized Avalanche Voltage and Current
Typical SMPS Topologies:
Full and Half Bridge 48V input Circuit
Forward 24V input Circuit
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IRF7473TRPBF MOSFET Power Electronics N-Channel 100V High Speed Switching Package 8-SOIC Images |