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Brand Name : Infineon
Model Number : IRFB3407ZPBF
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 75 V
Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 6.4mOhm @ 75A, 10V
IRFB3407ZPBF MOSFET Power Electronics N-Channel High Speed Power Switching Package T-220
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 6.4mOhm @ 75A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 150µA | |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 230W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | TO-220AB | |
Package / Case |
Applications
Battery Management
High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
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IRFB3407ZPBF MOSFET Power Electronics N-Channel High Speed Power Switching Package T-220 Images |