AON7280 MOSFET Power Electronics Transistors High Frequency Switching Performance Package 8-DFN-EP

Brand Name : AOS

Model Number : AON7280

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1 - 3 days

Packaging Details : standard

Drain to Source Voltage (Vdss) : 80 V

Rds On (Max) @ Id, Vgs : 8.5mOhm @ 20A, 10V

Gate Charge (Qg) (Max) @ Vgs : 38 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds : 1871 pF @ 40 V

Power Dissipation (Max) : 6.3W (Ta), 83W (Tc)

Supplier Device Package : 8-DFN-EP (3.3x3.3)

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Product Details

General Description

The AON7280 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.

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FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	20A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1871 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	6.3W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-DFN-EP (3.3x3.3)
Package / Case	8-PowerWDFN
Base Product Number	AON72


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AON7280 MOSFET Power Electronics Transistors High Frequency Switching Performance Package 8-DFN-EP

AON7280 MOSFET Power Electronics Transistors High Frequency Switching Performance Package 8-DFN-EP

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