IRF840PBF MOSFET High-Speed Switching Low On-Resistance and Maximum Power Output

IRF840PBF MOSFET High-Speed Switching Low On-Resistance and Maximum Power Output

Product Parameters:

Type: N-channel MOSFET
Drain Source Voltage (Vdss): 100V
Gate Threshold Voltage (Vgs(th)): 4V
Continuous Drain Current (Id): 10.8A
Maximum Drain Source On-state Resistance (Rds(on)): 0.005ohm
Maximum Power Dissipation (Pd): 83W
Number of Elements: 1
Package Type: TO-220AB
Mounting Type: Through Hole

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IRF840PBF MOSFET High-Speed Switching Low On-Resistance and Maximum Power Output Images