Sign In | Join Free | My portofva.com |
|
Brand Name : onsemi
Model Number : NTR4171PT1G
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 30 V
Current - Continuous Drain (Id) @ 25°C : 2.2A (Ta)
Rds On (Max) @ Id, Vgs : 75mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15.6 nC @ 10 V
Vgs (Max) : ±12V
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V | |
Rds On (Max) @ Id, Vgs | 75mOhm @ 2.2A, 10V | |
Vgs(th) (Max) @ Id | 1.4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 15.6 nC @ 10 V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 480mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SOT-23-3 (TO-236) | |
Package / Case |
Product Listing:
ON Semiconductor NTR4171PT1G - N-Channel Power MOSFET
• Vds - Drain to Source Voltage: 100V
• Id - Continuous Drain Current: 4.1A
• Rds - Drain to Source On-State Resistance: 0.29 Ohms
• Vgs - Gate to Source Voltage: ±20V
• Vth - Threshold Voltage: 4.0V
• Pd - Power Dissipation: 2.8W
• Gate Charge: 11.5nC
• Input Capacitance: 236pF
• Output Capacitance: 77pF
• Operating Temperature Range: -55°C to +150°C
• Mounting Type: Through Hole
![]() |
NTR4171PT1G MOSFET Power Electronics – For High Efficiency Power Conversion and Switching Applications Images |