FDN5618P MOSFET Power Electronics
TO-236-3 Transistor High Performance Low On Resistance High Speed Switching
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The FDN5618P is a MOSFET power electronics device designed to supply power in a wide variety of applications. This device is housed in a TO-236-3 package, making it ideal for use in tight spaces. It features an advanced power MOSFET technology with a high-side and low-side N-channel MOSFETs in one package. The low-side MOSFET has a maximum drain current of 2A and the high-side MOSFET has a maximum drain current of 0.5A.
This device has a low on-resistance of 0.5Ω for the low-side MOSFET and 0.2Ω for the high-side MOSFET. It also offers fast switching times of 110ns for the low-side MOSFET and 120ns for the high-side MOSFET. The maximum voltage rating of this device is 12V, which makes it suitable for a wide range of applications. This device is designed to operate at temperatures of up to 150°C and is RoHS compliant. The FDN5618P is an ideal choice for providing efficient power delivery in a wide variety of applications.
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FDN5618P MOSFET Power Electronics TO-236-3 Transistor High Performance Low On Resistance High Speed Switching Images
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