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Brand Name : onsemi
Model Number : FDBL0200N100
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 100 V
Current - Continuous Drain (Id) @ 25°C : 300A (Tc)
Rds On (Max) @ Id, Vgs : 2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 133 nC @ 10 V
Vgs (Max) : ±20V
MOSFET Power Electronics FDBL0200N100 High-Current High-Voltage High-Speed Low-Loss Power Switching Device
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 2mOhm @ 80A, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 133 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 9760 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 429W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-HPSOF |
Product Listing:
ON Semiconductor FDBL0200N100 N-Channel MOSFET Power Electronics
Features:
• 100V drain-source voltage
• 20A continuous drain current
• 2.5mΩ typical on-resistance
• 175°C maximum junction temperature
• Low gate charge
• Pb-free, RoHS compliant
• Halogen-free
• High-speed switching
• Low thermal resistance
• Avalanche energy rated
• Low input capacitance
• Low gate-source voltage threshold
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MOSFET Power Electronics FDBL0200N100 High-Current High-Voltage High-Speed Low-Loss Power Switching Device Images |