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Brand Name : onsemi
Model Number : HUF75645S3ST
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 100 V
Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
Rds On (Max) @ Id, Vgs : 14mOhm @ 75A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 238 nC @ 20 V
Vgs (Max) : ±20V
HUF75645S3ST N-Channel MOSFET Power Electronics for High-Performance Switching Applications
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 14mOhm @ 75A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 238 nC @ 20 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 3790 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 310W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | D²PAK (TO-263) |
Product Listing:
HUF75645S3ST MOSFET Power Electronics by ON Semiconductor
Features:
• Advanced process technology
• Low On-Resistance RDS(ON)
• Low gate charge Qg
• High current capability
• RoHS Compliant
• Halogen-Free Available
• Fast Switching
Specifications:
• Drain-Source Voltage: -45V
• Drain-Source On-State Resistance: 7.6mΩ
• Gate-Source Charge: 33nC
• Continuous Drain Current: 2.2A
• Power Dissipation: 2.8W
• Operating Temperature Range: -55°C to 175°C
• Storage Temperature Range: -55°C to 175°C
• Package/Case: SOT-23-3
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HUF75645S3ST N-Channel MOSFET Power Electronics for High-Performance Switching Applications Images |