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Brand Name : onsemi
Model Number : FDB035N10A
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 100 V
Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
Rds On (Max) @ Id, Vgs : 3.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 116 nC @ 10 V
Vgs (Max) : ±20V
FDB035N10A N-Channel MOSFET Power Electronics High-Performance Reliable Switching Solution for Power Conversion Applications
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 3.5mOhm @ 75A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 116 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 7295 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 333W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | D²PAK (TO-263) | |
Package / Case |
Product Listing: ON Semiconductor FDB035N10A MOSFET Power Electronics
Product Description: The ON Semiconductor FDB035N10A is a MOSFET Power Electronics device designed for high-power applications. It is intended for use in a wide range of switching applications including DC-DC converters, motor drives, and other high-power circuits.
Specifications:
• Drain-Source Voltage (Vdss): 100V
• Gate-Source Voltage (Vgs): ±20V
• Drain Current (Id): 35A
• Drain-Source On-State Resistance (RDS(on)): 0.023 ohm
• Power Dissipation (Pd): 58W
• Operating Temperature Range (Tj): -55 to 175°C
• Package/Case: TO-220AB
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FDB035N10A N-Channel MOSFET Power Electronics High-Performance Reliable Switching Solution for Power Conversion Applica Images |