NTR1P02LT1G MOSFET Power Electronics - High-Speed Switching and Reliable Protection for Power Control Applications

Product Categories

Semiconductor IC Chip [593]
Programmable IC Chip [703]
Integrated Circuit IC Chip [747]
MCU Microcontroller Unit [1749]
Electronic Components IC Chips [520]
Power Management ICs [1184]
Flash Memory Chips [653]
Sensors Transducers [323]
General Purpose Relays [51]
MOSFET Power Electronics [1316]
IGBT Power Module [42]
RF Power Transistors [53]
Amplifier IC Chips [687]
Power Isolator IC [412]
IC Diode Transistor [10]

Shenzhen Sai Collie Technology Co., Ltd.

Contact Now

NTR1P02LT1G MOSFET Power Electronics - High-Speed Switching and Reliable Protection for Power Control Applications

Name: NTR1P02LT1G MOSFET Power Electronics HighSpeed Switching and Reliable Protection for Power Control Applications
Brand: onsemi
Price: 1 USD

China NTR1P02LT1G MOSFET Power Electronics - High-Speed Switching and Reliable Protection for Power Control Applications wholesale

Brand Name : onsemi

Model Number : NTR1P02LT1G

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

Drain to Source Voltage (Vdss) : 20 V

Current - Continuous Drain (Id) @ 25°C : 1.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 220mOhm @ 750mA, 4.5V

Vgs(th) (Max) @ Id : 1.25V @ 250µA

Vgs (Max) : ±12V

Contact Now

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Shenzhen Sai Collie Technology Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!

FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	220mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id	1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.5 nC @ 4 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 5 V
FET Feature	-
Power Dissipation (Max)	400mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)

NTR1P02LT1G MOSFET Power Electronics - High-Speed Switching and Reliable Protection for Power Control Applications

NTR1P02LT1G MOSFET Power Electronics - High-Speed Switching and Reliable Protection for Power Control Applications

NTR1P02LT1G MOSFET Power Electronics - High-Speed Switching and Reliable Protection for Power Control Applications Images