FCB110N65F MOSFET Power Electronics
D²PAK Package N-Channel SuperFET® II FRFET®35A in resonant switching applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | |
Features
• 700 V @TJ = 150°C
• Typ. RDS(on) = 96 mΩ (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 98 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF)
• 100% Avalanche Tested • RoHS Compliant
Applications
• Telecom/Server Power Supplies
• Solar Inverters
• Computing Power Supplies
• FPD TV Power/Lighting
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. SuperFET® II FRFET® MOSFET combines a faster and more rugged intrinsic body diode performance with fast switching, aimed at achieving better reliability and efficiency especially in resonant switching applications. SuperFET® II FRFET® is very suitable for the switching power applications such as server/telecom power, Solar inverter, FPD TV power, computing power, lighting and industrial power applications.
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FCB110N65F MOSFET Power Electronics D²PAK Package N-Channel SuperFET® II FRFET®35A in resonant switching applications Images
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