FQP47P06 MOSFET Power Electronics
TO-220-3 Package P-Channel variable switching power applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
Description
This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
• −47 A, −60 V, RDS(on) = 26 m (Max.) @ VGS = −10 V,ID = −23.5 A
• Low Gate Charge (Typ. 84 nC)
• Low Crss (Typ. 320 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
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FQP47P06 MOSFET Power Electronics TO-220-3 Package P-Channel variable switching power applications Images
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